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STW29NK50Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW29NK50Z
Description  N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW29NK50Z Datasheet(HTML) 3 Page - STMicroelectronics

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STW29NK50Z
TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
500
S
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 150 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 15.5 A
0.105
0.13
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 15.5 A
24
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
6110
697
166
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 250 V, ID = 15 A,
RG = 4.7
Ω, VGS = 10 V
(Resistive Load see Figure 17)
44.5
41
129
33
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V, ID = 30 A,
VGS = 10 V
190
35.5
111
266
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
31
124
A
A
VSD (1)
Forward On Voltage
ISD = 31 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 30 A, di/dt = 100 A/µs
VDD = 44.8V, Tj = 25°C
(see test circuit Figure 5)
436
6.1
28
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 30 A, di/dt = 100 A/µs
VDD = 44.8V, Tj = 150°C
(see test circuit Figure 5)
500
7.5
30
ns
µC
A



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