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STB20PF75 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB20PF75 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 3/9 STB20PF75 SWITCHING ON (*) SWITCHING OFF (*) SOURCE DRAIN DIODE (*) (*) Pulse width [ 300 µs, duty cycle 1.5 %. ( •) Pulse width limited by T JMAX Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 37.5 V ID = 10 A RG =4.7 Ω VGS = 10 V (Resistive Load, Figure 1) 20 51 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=60V ID=20A VGS=10V (See test circuit, Figure 2) 38 7 10 52 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 60 V ID = 10 A RG =4.7 Ω VGS = 10 V (Resistive Load, Figure 1) 40 13 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 20 80 A A VSD (*) Forward On Voltage ISD = 20 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A di/dt = 100A/µs VDD = 25 V Tj = 150°C (see test circuit, Figure 3) 80 250 6.2 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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