Transistors

Publication date : December 2004

SJC00327AED

1

2SC5848

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SA2079



Features





Suitable for high-density mounting and douwsizing of the equipment for

ultraminiature leadless package

Package: 0.6 mm × 1.0 mm (hight 0.39 mm)



Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

60

V

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

7

V

Collector current

100

mA

Peak collector current

200

mA

Collector power dissipation

100

mW

Junction temperature

125

°

C

Storage temperature

–55 to +125

°

C



Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

60

V

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

7

V

Collector-base cutoff current (Emitter open)

0.1

µ

A

Collector-emitter cut-off current (Base open)

100

µ

A

Forward current transfer ratio

180

390



Collector-emitter saturation voltage

0.1

0.3

V

Transition frequency

100

MHz

Collector output capacitance

(Common base, input open circuited)

2.2

pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Unit: mm

1: Base

2: Emitter

3: Collector

ML3-N2 Package

2

1

3

−

0.03

2

1

3

Marking Symbol : 3E