HAF1009 datasheet(3/10 Pages) RENESAS

3 / 10 page

HAF1009(L), HAF1009(S)

Rev.1.00, May.13.2003, page 3 of 10

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain current

ID1

–10

—

VGS = –3.5, VDS = –2 V

Drain current

ID2

—

–10

VGS = –1.2V, VDS = –2 V

Drain to source breakdown

voltage

V(BR)DSS

–60

—

ID = –10 mA, VGS = 0

Gate to source breakdown

voltage

V(BR)GSS –16

—

IG = –800 µA, VDS = 0

Gate to source breakdown

voltage

V(BR)GSS 2.5

—

IG = 100 µA, VDS = 0

IGSS1

—

–100

µA

VGS = –8 V, VDS = 0

IGSS2

—

–50

µA

VGS = –3.5 V, VDS = 0

IGSS3

—

–1

µA

VGS = –1.2 V, VDS = 0

Gate to source leak current

IGSS4

—

100

µA

VGS = 2.4 V, VDS = 0

IGS(OP)1

—

–0.8

—

VGS = –8 V, VDS = 0

Input current (shut down)

IGS(OP)2

—

–0.35

—

VGS = –3.5 V, VDS = 0

Zero gate voltage drain

current

IDSS

—

–10

µA

VDS = –60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

–1.1

—

–2.15

VDS = –10 V, ID = –1 mA

Forward transfer admittance

|yfs|

8.4

14.8

—

ID = –20 A, VDS = –10 V

Note3

Static drain to source on state RDS(on)

—33

Ω

ID = –20 A, VGS = –4 V

Note3

resistance

RDS(on)

—20

Ω

ID = –20 A, VGS = –10 V

Note3

Output capacitance

Coss

—

1500

—

VDS = –10 V, VGS = 0, f = 1 MHz

Turn-on delay time

td(on)

—

10.6

—

µs

Rise time

—

µs

Turn-off delay time

td(off)

—

µs

Fall time

—

µs

VGS = -10 V, ID= –20 A,

RL = 1.5

Ω

Body–drain diode forward

voltage

VDF

—

–0.95

—

IF = –40 A, VGS = 0

Body–drain diode reverse

recovery time

trr

—

100

—

IF = –40 A, VGS = 0

diF/dt = 50 A/µs

Over load shut down

tos1

—4.1

—ms

VGS = –5 V, VDD = –16 V

operation time

Note4

tos2

—1.5

—ms

VGS = –5 V, VDD = –24 V

Notes: 3. Pulse test

4. Including the junction temperature rise of the over loaded condition.

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