Nexperia

BSP60

PNP Darlington transistor

10. Characteristics

Table 7. Characteristics

Tj = 25 °C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)CBO

collector-base

breakdown voltage

IC = -100 µA; IE = 0 A

-60

-

-

V

V(BR)CES

collector-emitter

breakdown voltage

IC = -2 mA; VBE = 0 V

-45

-

-

V

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = -100 µA

-5

-

-

V

ICES

collector-emitter cut-off

current

VBE = 0 V; VCE = -45 V

-

-

-50

nA

IEBO

emitter-base cut-off

current

VEB = -4 V; IC = 0 A

-

-

-50

nA

VCE = -10 V; IC = -150 mA

[1]

1000

-

-

hFE

DC current gain

VCE = -10 V; IC = -500 mA

[1]

2000

-

-

IC = -500 mA; IB = -0.5 mA

-

-

-1.3

V

VCEsat

collector-emitter

saturation voltage

IC = -500 mA; IB = -0.5 mA; Tj = 150 °C

-

-

-1.3

V

VBEsat

base-emitter saturation

voltage

IC = -500 mA; IB = -0.5 mA

-

-

-1.9

V

ton

turn-on time

-

400

-

ns

toff

turn-off time

IC = -500 mA; IBon = -0.5 mA;

IBoff = 0.5 mA

-

1500

-

ns

fT

transition frequency

VCE = -5 V; IC = -500 mA; f = 100 MHz

-

200

-

MHz

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

mgd839

0

6000

2000

1000

3000

4000

5000

- 10- 1

- 1

- 10

- 102

- 103

hFE

IC (mA)

VCE = -10 V

Fig. 1. DC current gain; typical values

BSP60

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Product data sheet

2 May 2018

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