BST50 datasheet(5/9 Pages) NEXPERIA

5 / 9 page

2004 Dec 09

NXP Semiconductors

Product data sheet

NPN Darlington transistors

BST50; BST51; BST52

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICES

collector-emitter cut-off current

BST50

VBE = 0 V; VCE = 45 V

−

BST51

VBE = 0 V; VCE = 60 V

−

BST52

VBE = 0 V; VCE = 80 V

−

IEBO

emitter-base cut-off current

IC = 0 A; VEB = 4 V

−

hFE

DC current gain

VCE = 10 V; note 1; (see Fig.2)

IC = 150 mA

1000

−

IC = 500 mA

2000

−

VCEsat

collector-emitter saturation

voltage

IC = 500 mA; IB = 0.5 mA

−

1.3

IC = 500 mA; IB = 0.5 mA;

Tj = 150 °C

−

1.3

VBEsat

base-emitter saturation voltage

IC = 500 mA; IB = 0.5 mA

−

1.9

transition frequency

IC = 500 mA; VCE = 5 V;

f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels); (see Fig.3)

ton

turn-on time

ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA

−

400

−

toff

turn-off time

−

1500

−

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