Nexperia

MJD32C

100 V, 3 A PNP high power bipolar transistor

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

B

base

2

C

collector

3

E

emitter

mb

C

mounting base; connected

to collector

3

2

mb

1

DPAK (SOT428C)

aaa-029523

C; mb

E

B

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

MJD32C

DPAK

Plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped)

SOT428C

7. Marking

Table 4. Marking codes

Type number

Marking code

MJD32C

MJD32C

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCEO

collector-emitter voltage open base

-

-100

V

VEBO

emitter-base voltage

open collector

-

-6

V

IC

collector current

-

-3

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

-5

A

Tmb ≤ 25 °C

[1]

-

15

W

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

1.6

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Total power dissipation junction to mounting base.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm2.

MJD32C

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2019. All rights reserved

Product data sheet

30 September 2019

2 / 11