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STM8AF6366ITC Datasheet(PDF) 76 Page - STMicroelectronics

Part # STM8AF6366ITC
Description  Automotive 8-bit MCU, with up to 32-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V
PDF  95 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF6366ITC Datasheet(HTML) 76 Page - STMicroelectronics

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Electrical characteristics
STM8AF6366
76/95
DS12343 Rev 2
Electromagnetic interference (EMI)
Emission tests conform to the IEC 61967-2 standard for test software, board layout and pin
loading.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 43. EMI data
Symbol
Parameter
Conditions
Unit
General conditions
Monitored
frequency band
Max fCPU(1)
1. Guaranteed by characterization.
8
MHz
16
MHz
SEMI
Peak level
VDD = 5 V,
TA = 25 °C,
LQFP80 package
conforming to IEC
61967-2
0.1 MHz to 30 MHz
15
17
dBµV
30 MHz to 130 MHz
18
22
130 MHz to 1 GHz
-1
3
EMI level
-
2
2.5
Table 44. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1. Guaranteed by characterization.
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA = 25°C, conforming to
JESD22-A114
3A
4000
V
VESD(CDM)
Electrostatic discharge voltage
(Charge device model)
TA= 25°C, conforming to
JESD22-C101
3
500
VESD(MM)
Electrostatic discharge voltage
(Machine model)
TA= 25°C, conforming to
JESD22-A115
B
200



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