STB80NF55-06 datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay T ime

Rise Time

VDD =27 V

I D =40 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

240

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD =44 V

ID =80 A

VGS = 10 V

178

230

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay T ime

Fall T ime

VDD = 27 V

ID =40 A

RG =4.7

Ω

VGS =10 V

(Resistive Load, see fig. 3)

260

td(off)

tr(Voff)

Turn-off Delay T ime

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VDD =44 V

I D =80 A

RG =4.7

Ω

VGS =10 V

(Induct ive Load, see fig. 5)

225

145

205

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

320

VSD (

∗)Forward On Voltage

ISD =80 A

VGS =0

1. 5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 80 A

di/ dt = 100 A/

µs

VDD =20 V

TJ =150

(see t est circuit, f ig. 5)

0.24

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STB80NF55-06

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