STP80NF55-06FP datasheet(1/7 Pages) STMICROELECTRONICS

Part #	STP80NF55-06FP

Description	N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB80NF55-06

N - CHANNEL 55V - 0.005

Ω - 80A TO-262/TO-263

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.005

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)\

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX ”T4”)

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

55

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)55

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC80

A

ID

Drain Current (continuous) at Tc =100

oC57

A

IDM (

•)

Drain Current (pulsed)

320

A

Ptot

T otal Dissipat ion at Tc =25

oC

210

W

Derating Factor

1.43

W /

o C

dv/dt

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STB80NF55-06

55 V

< 0.0065

Ω

80 A

1

2 3

1

3

I

2PAK

TO-262

(suffix ”-1”)

D

2PAK

TO-263

(suffix ”T4”)

1/7

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