1998

©

Document No. D13533EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

THYRISTORS

3P4MH, 3P6MH

3 A MOLD SCR

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The 3P4MH and 3P6MH are P-gate fully diffused mold

SCRs with an average on-current of 3 A. The repeat peak off-

voltages (and reverse voltages) are 400 V and 600 V.

FEATURES

• This transistor features a small and lightweight package and

is easy to handle even on the mounting surface due to its

TO-202AA dimensions. Processing of lead wires

and

heatsink (tablet) using jigs is also possible.

• Employs flame-retardant epoxy resin (UL94V-0).

APPLICATIONS

Noncontact switches of consumer electronic euipments,

electric equipments, audio quipments, and light indutry

equipements

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

3P4MH

3P6MH

Ratings

Unit

Non-repetitive peak reverse voltage

VRSM

500

700

V

RGK = 1 k

Ω

Non-repetitive peak off-state voltage

VDSM

500

700

V

RGK = 1 k

Ω

Repetitive peak reverse voltage

VRRM

400

600

V

RGK = 1 k

Ω

Repetitive peak off-voltage

VDRM

400

600

V

RGK = 1 k

Ω

Average on-state current

IT(AV)

3 (Tc = 87

°C, Single half-wave,

θ = 180°)A

Refer to Figure 11.

Effective on-state current

IT(RMS)

4.7

A

−

Surge on-state current

ITSM

65 (f = 50 Hz, Sine half-wave, 1 cycle)

70 (f = 60 Hz, Sine half-wave, 1 cycle)

A

Refer to Figure 2.

Fusing current

∫ it2dt

20 (1 ms

≤t≤10 ms)

A

2s

−

Critical rate of rise of on-state current

dIT/dt

50

A/

µs

−

Peak gate power dissipation

PGM

2 (f

≥50 Hz, Duty≤10%)

W

Refer to Figure 3.

Average gate power dissipation

PG(AV)

0.2

W

Peak gate forward current

IFGM

1 (f

≥50 Hz, Duty≤10%)

A

−

Peak gate reverse voltage

VRGM

6V

−

Junction temperature

Tj

−40 to +125

°C

−

Storage temperature

Tstg

−55 tp +150

°C

−

Electrode connection

<1>Cathode

<2>Anode

<3>Gate

Standard weight: 1.4

*TC test bench-mark