FN3993 Rev.1.00

Page 2 of 2

July 1998

ACS08MS

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Die Characteristics

DIE DIMENSIONS:

Size: 2390

mx 2390m (94 mils x 94 mils)

Thickness: 525

m 25m (20.6 mils 1 mil)

Bond Pad: 110

m x 110m (4.3 mils x 4.3 mils)

METALLIZATION:

Al



Metal 1 Thickness: 0.7

m 0.1m

Metal 2 Thickness: 1.0

m 0.1m

SUBSTRATE POTENTIAL:

Unbiased Insulator

PASSIVATION

Type: Phosphorous Silicon Glass (PSG)



Thickness: 1.30

m 0.15m

SPECIAL INSTRUCTIONS:

Bond VCC First

ADDITIONAL INFORMATION:

Worst Case Density: <2.0 x 105 A/cm2

Transistor Count: 176

Metallization Mask Layout

ACS08MS

B1

A1

VCC

B4

Y1

A2

NC

B2

A4

Y4

NC

B3

Y2

GND

Y3

A3