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BCV62

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Product data sheet

Rev. 4 — 26 July 2010

3 of 14

Nexperia

BCV62

PNP general-purpose double transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB).

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB.

7.

Characteristics

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

−30

V

VCEO

collector-emitter voltage

open base

-

−30

V

VEBS

emitter-base voltage

VCE =0V

-

−6V

IC

collector current

-

−100

mA

ICM

peak collector current

-

−200

mA

IBM

peak base current

-

−200

mA

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

[1] -

-

500

K/W

Table 8.

Characteristics

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Transistor TR1

ICBO

collector-base

cut-off current

VCB = −30 V; IE =0A

-

-

−15

nA

VCB = −30 V; IE =0A;

Tj = 150 °C

--

−5

μA

IEBO

emitter-base

cut-off current

VEB = −5V; IC =0A

-

-

−100 nA

hFE

DC current gain

VCE = −5V;

IC = −100 μA

100

-

-

VCE = −5V; IC = −2 mA

100

-

800

VCEsat

collector-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

-

−75

−300 mV

IC = −100 mA;

IB = −5mA

-

−250 −650 mV