BCV65

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Nexperia B.V. 2010. All rights reserved.

Product data sheet

Rev. 4 — 27 July 2010

4 of 11

Nexperia

BCV65

NPN/PNP general-purpose transistor

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

VCE =5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

Fig 1.

TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 2.

TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

IC/IB =20

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

IC/IB =10

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

Fig 3.

TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 4.

TR1 (NPN): Base-emitter saturation voltage as

a function of collector current; typical values

mgt727

10−1

110

102

103

IC (mA)

0

600

500

400

300

200

100

hFE

(1)

(2)

(3)

0

1200

1000

800

600

400

200

mgt728

10−2

10−1

110

102

103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

104

103

102

10

mgt729

10−1

110

102

103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

mgt730

10−1

110

102

103

IC (mA)

0

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)