Nexperia

BCV71

NPN general purpose transistors

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = 20 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICBO

collector-base cut-off

current

VCB = 20 V; IE = 0 A; Tj = 100 °C

-

-

10

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 5 V; IC = 10 µA; Tamb = 25 °C

-

90

-

hFE

DC current gain

VCE = 5 V; IC = 2 mA; Tamb = 25 °C

110

-

220

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

120

250

mV

VCEsat

collector-emitter

saturation voltage

IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C

-

210

-

mV

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

750

-

mV

VBEsat

base-emitter saturation

voltage

IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C

-

850

-

mV

VBE

base-emitter voltage

VCE = 5 V; IC = 2 mA; Tamb = 25 °C

550

-

700

mV

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

2.5

-

pF

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

100

-

-

MHz

NF

noise figure

VCE = 5 V; IC = 200 µA; RS = 2 kΩ;

f = 1 MHz; B = 200 Hz; Tamb = 25 °C

-

-

10

dB

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

18-03-12

Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

1

2

3

Fig. 1. Package outline SOT23

BCV71

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2022. All rights reserved

Product data sheet

25 May 2022

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