Specifications and information herein are subject to change without notice.

981221TM2fXHD

Absolute Maximum Ratings / Ta=25

°C

Drain to Source Voltage

Gate to Source Voltage

Drain Current(DC)

Drain Current(Pulse)

Allowable power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

V

V

A

A

W

W

°C

°C

Electrical Characteristics / Ta=25

°C

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain to Source

On State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Diode Forward Voltage

Switching Time Test Circuit

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

TENTATIVE

PW

≤10µS, dutycycle≤1%

Mounted on ceramic board

(1000mm2 ! 0.8mm) 1unit

Mounted on ceramic board

(1000mm2 ! 0.8mm)

unit

Features

20

±10

2.2

8.8

0.8

1.0

150

--55 to +150

(

)

min

typ

max

unit

20

0.4

3.8

V

µA

µA

V

S

m

Ω

m

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on) 1

RDS(on) 2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=1mA

, VGS=0

VDS=20V

, VGS=0

VGS=

±8V , VDS=0

VDS=10V

, ID=1mA

VDS=10V

, ID=2.2A

ID=2.2A

, VGS=4V

ID=0.5A

, VGS=2.5V

VDS=10V

, f=1MHz

VDS=10V

, f=1MHz

VDS=10V

, f=1MHz

See Specified Test

Circuit

VDS=10V, VGS=10V, ID=2.2A

IS=2.2A

, VGS=0

N- Channel Silicon MOS FET

Very High Speed-Switchng

5.5

100

130

170

90

43

10

38

30

26

9.5

1

1.5

1.0

10

±10

1.3

130

180

1.2

50

Ω

P.G

FTD2003

S

G

D

VOUT

VDD=10V

VIN

ID=2.2A

RL=4.5

Ω

PW=10

µS

D.C.

≤1%

VIN

4V

0V

FTD2003

Case Outline

TSSOP8(unit:mm)

Electrical Connection

D2

S2

S2

G2

D1

S1

S1

G1

1 : Drain1

2 : Source1

3 : Source1

4 : Gate1

5 : Gate2

6 : Source2

7 : Source2

8 : Drain2

0.425

5

3.0

0.125

0.25

0.65

6

7

8

4

3

2

1

Marking : D2003

SANYO Electric Co., Ltd. Semiconductor Business Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN

• Low ON-state resistance.

• 2.5V drive.

• Mount height of 1.1mm.

• Complex Type enabling high density mount