1998

©

Document No. D13110EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

COMPOUND TRANSISTOR

CE2F3P

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The CE2F3P is a transistor of on-chip high hFE resistor

incorporating dumper diode in collector to emitter as protect

elements. This transistor is ideal for actuator drives of OA

equipments and electric equipments.

FEATURES

•

On-chip bias resistor: R1 = 2.2 k

Ω, R2 = 10 kΩ

•

Low power consumption during driving:

VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A

•

On-chip dumper diode for reverse cable

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

60

V

Emitter to base voltage

VEBO

15

V

Collector current (DC)

IC(DC)

±2.0

A

Collector current (Pulse)

IC(pulse) *

±3.0

A

Base current (DC)

IB(DC)

0.03

A

Total power dissipation

PT

1.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50 %

PACKAGE DRAWING (UNIT: mm)

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 40 V, IE = 0

100

nA

DC current gain

hFE1 **

VCE = 5.0 V, IC = 0.2 A

700

1200

−

DC current gain

hFE2 **

VCE = 5.0 V, IC = 1.0 A

1000

1600

3000

−

DC current gain

hFE3 **

VCE = 5.0 V, IC = 2.0 A

500

1200

−

Low level output voltage

VOL **

VI = 5.0 V, IC = 0.5 A

0.12

0.3

V

Low level input voltage

VIL **

VCE = 12 V, IC = 100

µA0.5

0.4

V

Input resistance 1

R1

1.54

2.2

2.86

k

Ω

Input resistance 2

R2

7.0

10.0

13.0

k

Ω

Turn-on time

ton

0.4

µs

Storage time

tstg

1.4

µs

Fall time

tf

IC = 1.0 A

IBI =

−IB2 = 10 mA

VCC = 20 V, RL = 20

Ω

0.5

µs

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2 %