1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

V

ID

Drain current (continuous) at TC = 25 °C

12

A

Drain current (continuous) at TC = 100 °C

7.5

IDM(1)

Drain current (pulsed)

28

A

PTOT

Total power dissipation at TC = 25 °C

115

W

dv/dt(2)

Peak diode recovery voltage slope

5

V/ns

di/dt(2)

Peak diode recovery current slope

100

A/µs

dv/dt(3)

MOSFET dv/dt ruggedness

120

V/ns

Tstg

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 6 A; VDS (peak) = 400 V

3. VDS ≤ 640 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

1.07

°C/W

RthJA

Thermal resistance, junction-to-ambient

62.5

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.)

3.2

A

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

130

mJ

STP80N340K6

Electrical ratings

DS14083 - Rev 1

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