Nexperia

NHUMD10/13/9 series

80 V, 100 mA NPN/PNP resistor-equipped double transistors

aaa-031829

IC (mA)

10-1

102

10

1

10-1

1

VCEsat

(V)

10-2

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 31. NHUMD9, TR1 (NPN): Collector-emitter

saturation voltage as a function of collector

current; typical values

VCB (V)

0

80

60

20

40

aaa-031830

1.5

2.0

1.0

2.5

3.0

Cc

(pF)

0.5

f = 1 MHz

Tamb = 25 °C

Fig. 32. NHUMD9, TR1 (NPN): Collector capacitance

as a function of collector-base voltage; typical

values

IC (mA)

-10-1

-102

-10

-1

aaa-031752

102

10

103

hFE

1

(1)

(3)

(2)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 33. NHUMD9, TR2 (PNP): DC current gain as a

function of collector current; typical values

VCE (V)

0

-5

-4

-2

-3

-1

aaa-031753

-0.04

-0.06

-0.02

-0.08

-0.10

IC

(A)

0

-0.065 mA

-0.195 mA

-0.130 mA

-0.260 mA

-0.325 mA

-0.390 mA

-0.455 mA

-0.520 mA

IB = -0.650 mA

-0.585 mA

Tamb = 25 °C

Fig. 34. NHUMD9, TR2 (PNP): Collector current as a

function of collector-emitter voltage; typical

values

NHUMD10_13_9_SER

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Nexperia B.V. 2020. All rights reserved

Product data sheet

Rev. 1 — 24 July 2020

13 / 20