Nexperia

PDTC143/114/124/144EQB series

50 V, 100 mA NPN resistor-equipped transistors

IC (mA)

10-1

102

10

1

006aac831

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 4. PDTC143EQB: DC current gain as a function of

collector current; typical values

VCE (V)

0

5

4

2

3

1

aaa-018583

0.04

0.06

0.02

0.08

0.1

IC

(A)

0

IB = 0.16 mA

0.32 mA

0.40 mA

0.48 mA

0.56 mA

0.64 mA

0.80 mA

0.24 mA

0.72 mA

Tamb = 25 °C

Fig. 5. PDTC143EQB: Collector current as a function of

collector-emitter voltage; typical values

IC (mA)

1

102

10

006aac832

10-1

1

VCEsat

(V)

10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 6. PDTC143EQB: Collector-emitter saturation

voltage as a function of collector current;

typical values

006aac833

IC (mA)

10-1

102

10

1

1

10

VI(on)

(V)

10-1

(1)

(2)

(3)

VCE = 0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 7. PDTC143EQB: On-state input voltage as a

function of collector current; typical values

PDTC143_114_124_144EQB_SER

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Nexperia B.V. 2021. All rights reserved

Product data sheet

Rev. 1 — 1 October 2021

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