PDTD113E_SER_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 16 November 2009

3 of 10

NXP Semiconductors

PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 k

Ω, R2 = 1 kΩ

3.

Ordering information

[1]

Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 4.

Ordering information

Type number

Package

Name

Description

Version

PDTD113EK

SC-59A

plastic surface mounted package; 3 leads

SOT346

PDTD113ES[1]

SC-43A

plastic single-ended leaded (through hole) package;

3 leads

SOT54

PDTD113ET

-

plastic surface mounted package; 3 leads

SOT23

Table 5.

Marking codes

Type number

Marking code[1]

PDTD113EK

E1

PDTD113ES

D113ES

PDTD113ET

*7R

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+10

V

negative

-

−10

V

IO

output current (DC)

-

500

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

SOT346

-

250

mW

SOT54

-

500

mW

SOT23

-

250

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C