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P-Channel E nhancement Mode MOS FE T
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
V
Gate-S ource Voltage
VGS
25
V
Drain Current-Continuous @ TJ=125 C
-Pulsed
ID
-8
-40
-1.7
2.5
A
A
A
W
IDM
Drain-S ource Diode Forward Current
IS
Maximum Power Dissipation
PD
Operating Junction and S torage
Temperature R ange
TJ, TS TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R JA
50
/W
C
S S M4435
a
a
a
a
b
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
5
1
J ULY ,2004 V er1.1
S urface Mount Package.
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON) ( m W ) Max
-8A
20 @ V GS = -10V
35 @ V GS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S O-8
1
-30V
S outh S ea S emiconductor
SSS
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