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V6155 Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA |
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V6155 Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA |
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2 / 12 page ![]() V6155 2 Absolute Maximum Ratings Parameter Symbol Conditions Maximum voltage at V DD Minimum voltage at V DD Max. voltage at any signal pin Min. voltage at any signal pin Storage temperature Electrostatic discharge max. to MIL-STD-883C method 3015 Max. soldering conditions V DDmax V DDmin V MAX V MIN T STO V Smax T Smax V SS + 8 V V SS − 0.3 V V DD + 0.3 V V SS − 0.3 V -65 to+150 °C 1000 V 250 °C x 10 s Table 1 Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions should be taken as for any other CMOS component. Unless otherwise specified, proper opera- tion can only occur when all terminal voltages are kept within the supply voltage range. Unused inputs must always be tied to a defined logic voltage level. Operating Conditions Parameter Symbol Min. Typ. Max. Units s Operating temperature1) Supply voltage2) & guaranteed3) Comparator input voltage RC-oscillator programming T A V DD V DD V IN R -40 1.2 1.2 0 10 +125 7.0 V DD 1000 °C V V V k Ω Table 2 1) The maximum operating temperature is confirmed by sampling at initial device qualification. In production, all devices are tested at +85 °C. On request devices tested at +125 °C can be supplied. 2) A 100 nF decoupling capacitor is required on the supply voltage V DD for stability. 3) RES must be pulled up externally to V DD even if it is unused. (Note: RES and EN are used as inputs by EM test.) Electrical Characteristics 3 ≤ V DD ≤ 5.5 V, C = 100 nF, TA = -40 to +85 °C, unless otherwise specified Parameter Symbol Test Conditions Min. Typ. Max. Units Supply current in standby mode (switched to R INT) Supply current and Output Low Voltage Output High Voltage and V IN Input Low Level Input High Level Leakage current input V IN input resistance Comparator reference1) Comparator hysteresis1) I SS I SS V OL V OL V OL V OL V OH V OH V OH V IL V IH I LI R VIN V REF V REF V REF V HY R EXT = don’t care, TCL = V DD V IN = V DD R EXT = 100 kΩ, I/Ps at VDD V DD = 4.5 V, IOL = 20 mA V DD = 4.5 V, IOL = 8 mA V DD = 2.0 V, IOL = 4 mA V DD = 1.2 V, IOL = 0.5 mA V DD = 4.5 V, IOH = −1mA V DD = 2.0 V, IOH = −100 µA V DD = 1.2 V, IOH = −30 µA V SS ≤ VTCL ≤ VDD T A = +25 °C T A = −40 to +125 °C 3.5 1.8 1.0 V SS 2.0 1.25 1.24 1.22 34 55 0.4 0.2 0.2 0.05 4.1 1.9 1.1 0.05 100 1.275 2 50 100 0.4 0.4 0.2 0.8 V DD 1 1.30 1.31 1.31 µA µA V V V V V V V V V µA M Ω V V V mV Table3 1) The comparator reference is the power-down reset threshold. The power-on reset threshold equals the comparator reference voltage plus the comparator hysteresis (see Fig. 6). RES EN EN TCL TCL TCL TCL RES EN |
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