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V6155 Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA

Part # V6155
Description  Extremely Accurate Power Surveillance, Software Monitoring and Sleep Mode Detection
PDF  12 Pages
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Manufacturer  EMMICRO [EM Microelectronic - MARIN SA]
Direct Link  http://www.emmicroelectronic.com
Logo EMMICRO - EM Microelectronic - MARIN SA

V6155 Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA

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V6155
2
Absolute Maximum Ratings
Parameter
Symbol Conditions
Maximum voltage at V
DD
Minimum voltage at V
DD
Max. voltage at any signal pin
Min. voltage at any signal pin
Storage temperature
Electrostatic discharge max. to
MIL-STD-883C method 3015
Max. soldering conditions
V
DDmax
V
DDmin
V
MAX
V
MIN
T
STO
V
Smax
T
Smax
V
SS + 8 V
V
SS − 0.3 V
V
DD + 0.3 V
V
SS − 0.3 V
-65 to+150 °C
1000 V
250 °C x 10 s
Table 1
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified operating conditions may affect device
reliability or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages
or
electric
fields;
however,
anti-static
precautions should be taken as for any other CMOS
component. Unless otherwise specified, proper opera-
tion can only occur when all terminal voltages are kept
within the supply voltage range. Unused inputs must
always be tied to a defined logic voltage level.
Operating Conditions
Parameter
Symbol Min. Typ. Max. Units
s
Operating temperature1)
Supply voltage2)
&
guaranteed3)
Comparator input
voltage
RC-oscillator
programming
T
A
V
DD
V
DD
V
IN
R
-40
1.2
1.2
0
10
+125
7.0
V
DD
1000
°C
V
V
V
k
Ω
Table 2
1) The maximum operating
temperature
is
confirmed by
sampling at initial device qualification. In production, all
devices are tested at +85
°C. On request devices tested
at +125
°C can be supplied.
2) A
100
nF decoupling capacitor is required on the
supply voltage V
DD for stability.
3) RES must be pulled up externally to V
DD even if it is
unused. (Note: RES and EN are used as inputs by EM test.)
Electrical Characteristics
3
≤ V
DD ≤ 5.5 V, C = 100 nF, TA = -40 to +85 °C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Supply current in standby mode
(switched to R
INT)
Supply current
and
Output Low Voltage
Output High Voltage
and V
IN
Input Low Level
Input High Level
Leakage current
input
V
IN input resistance
Comparator reference1)
Comparator hysteresis1)
I
SS
I
SS
V
OL
V
OL
V
OL
V
OL
V
OH
V
OH
V
OH
V
IL
V
IH
I
LI
R
VIN
V
REF
V
REF
V
REF
V
HY
R
EXT = don’t care, TCL = V DD
V
IN = V DD
R
EXT = 100 kΩ, I/Ps at VDD
V
DD = 4.5 V, IOL = 20 mA
V
DD = 4.5 V, IOL = 8 mA
V
DD = 2.0 V, IOL = 4 mA
V
DD = 1.2 V, IOL = 0.5 mA
V
DD = 4.5 V, IOH = −1mA
V
DD = 2.0 V, IOH = −100 µA
V
DD = 1.2 V, IOH = −30 µA
V
SS ≤ VTCL ≤ VDD
T
A = +25 °C
T
A = −40 to +125 °C
3.5
1.8
1.0
V
SS
2.0
1.25
1.24
1.22
34
55
0.4
0.2
0.2
0.05
4.1
1.9
1.1
0.05
100
1.275
2
50
100
0.4
0.4
0.2
0.8
V
DD
1
1.30
1.31
1.31
µA
µA
V
V
V
V
V
V
V
V
V
µA
M
Ω
V
V
V
mV
Table3
1) The comparator reference is the power-down reset threshold. The power-on reset threshold equals the comparator
reference voltage plus the comparator hysteresis (see Fig. 6).
RES
EN
EN
TCL
TCL
TCL
TCL
RES EN



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