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BA423AL Datasheet(PDF) 3 Page - NXP Semiconductors |
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BA423AL Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 4 page ![]() 1996 Mar 13 3 Philips Semiconductors Product specification AM band-switching diode BA423AL GRAPHICAL DATA Fig.2 Forward current as a function of forward voltage. (1) Tj = 125 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. handbook, halfpage 0 1.5 100 0 50 MBG292 0.5 1 I F (mA) V (V) F (1) (2) (3) VR =20V. Solid line: maximum values. Dotted line: typical values. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 10 4 10 3 10 2 10 1 150 0 MBG291 50 100 Tj ( C) o I R (nA) Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 04 8 16 4 3 1 0 2 MBG297 12 V R (V) Cd (pF) Fig.5 Diode forward resistance as a function of forward current; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 04 8 16 4 3 1 0 2 MBG298 12 I F (mA) rD ( Ω) |
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