Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

58

49

2.5

4.5

-100

100

5

mW

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Typ

Max

650

VDS = 650V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 20A

VDD = 520V, ID =10A,

VGS = 10V, RGEN = 10W

VDS = 520V, ID = 10A,

VGS = 10V

VDS = 100V, VGS = 0V,

f = 1.0 MHz

2300

120

10

52

23

176

9

92

21

37

46

1.5

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

IS f

VGS = 0V, IS = 20A

ns

uC

A

IF = 20A,di/dt = 100A/us

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

f.Full package IS(max) = 24.3A .

g.L = 37.5mH, IAS = 4.5A, VDD = 60V, RG = 25W, Starting TJ = 25 C.

CEP46N65SF/CEB46N65SF

CEF46N65SF

Reverse Recovery Time

Reverse Recovery Charge

Peak Reverse Recovery Current

Trr

Qrr

Irr

183

1.2

12