HIP2210, HIP2211

5. Applications Information

FN9347 Rev.1.01

Page 21 of 27

Jun.23.20

charge losses. The calculation of the power dissipation of the HIP2210/HIP2211 is approximated by Equation 3

through Equation 9:

5.10.1 Gate Power (for the HO and LO Outputs)

where QgateH and QgateL are the total gate charge of the high-side and low-side bridge FET, respectively.

This information is commonly found in the MOSFET datasheet typical performance curves for Qgs vs Gate

Voltage. VDD is the bias to the HIP2210/HIP2211 and Freq is the PWM switching frequency operation.

5.10.2 Boot Diode Dissipation

Equation 4 and Equation 5 represent the boot diode conduction loss from recharging the boot capacitor during the

boot refresh cycle (phase node is low). The average current is proportional to the total charge delivered to the

high-side NMOS FET and the switching frequency.

where 0.7V is the typical internal boot diode forward voltage of the HIP2210/HIP2211, and Rdiode is the dynamic

resistance of the boot diode. See Figure 22 and Figure 23.

5.10.3 Dynamic Operating Current

where Idynamic is the dynamic operating current of the HIP2210 or HIP2211 into the HB pin at the switching

frequency.

VHB is the average boot to phase voltage and is approximately VHB - VHS = VDD - 0.7V.

5.10.4 Total Power Dissipation

5.10.5 Junction Operating Temperature

where TJ is the junction temperature at the operating ambient temperature in the vicinity of the part, TA.

where TJ is the junction temperature with the operating temperature of the PCB, TPCB, as measured where the

EPAD is soldered.

(EQ. 3)

Pgate

QgateH QgateL

+

 Freq VDD





=

(EQ. 4)

Idiode_avg

Qgate Freq



=

(EQ. 5)

Pdiode

Idiode_avg 0.7V Idiode_avg Rdiode



+





=

(EQ. 6)

Pdynamic

Idynamic VHB



=

(EQ. 7)

Ptotal

Pgate Pdiode Pdynamic

++

=

(EQ. 8)

TJ

Ptotal JA



TA

+

=

(EQ. 9)

TJ

Ptotal JC



TPCB

+

=