ICS844256DGI REVISION A AUGUST 5, 2010

5

©2010 Integrated Device Technology, Inc.

ICS844256DI Data Sheet

FEMTOCLOCK® CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER W/INTEGRATED FANOUT BUFFER

Table 4C. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5%, VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = -40°C to 85°C

Table 4D. LVDS DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = -40°C to 85°C

Table 4E. LVDS DC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C

Table 5. Crystal Characteristics

NOTE: Characterized using an 18pF parallel resonant crystal.

Symbol

Parameter

Test Conditions

Minimum

Typical

Maximum

Units

VIH

Input High Voltage

2

VDD + 0.3

V

VIL

Input Low Voltage

-0.3

0.8

V

IIH

Input High Current

FB_SEL

VDD = VIN = 3.465V

150

µA

PLL_BYPASS,

N_SEL0, N_SEL1

VDD = VIN = 3.465V

5

µA

IIL

Input Low Current

FB_SEL

VDD = 3.465V, VIN = 0V

-5

µA

PLL_BYPASS,

N_SEL0, N_SEL1

VDD = 3.465V, VIN = 0V

-150

µA

Symbol

Parameter

Test Conditions

Minimum

Typical

Maximum

Units

VOD

Differential Output Voltage

247

350

454

mV

∆V

OD

VOD Magnitude Change

50

mV

VOS

Offset Voltage

1.125

1.25

1.45

V

∆V

OS

VOS Magnitude Change

50

mV

Symbol

Parameter

Test Conditions

Minimum

Typical

Maximum

Units

VOD

Differential Output Voltage

247

350

454

mV

∆V

OD

VOD Magnitude Change

50

mV

VOS

Offset Voltage

1.125

1.25

1.45

V

∆V

OS

VOS Magnitude Change

50

mV

Parameter

Test Conditions

Minimum

Typical

Maximum

Units

Mode of Oscillation

Fundamental

Frequency

15.625

25.5

MHz

Equivalent Series Resistance (ESR)

50

Ω

Shunt Capacitance

7pF

Drive Level

1mW