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BAS221 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BAS221
Description  General purpose diode
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS221 Datasheet(HTML) 5 Page - NXP Semiconductors

  BAS221 Datasheet HTML 1Page - NXP Semiconductors BAS221 Datasheet HTML 2Page - NXP Semiconductors BAS221 Datasheet HTML 3Page - NXP Semiconductors BAS221 Datasheet HTML 4Page - NXP Semiconductors BAS221 Datasheet HTML 5Page - NXP Semiconductors BAS221 Datasheet HTML 6Page - NXP Semiconductors BAS221 Datasheet HTML 7Page - NXP Semiconductors BAS221 Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 07
5
Philips Semiconductors
Product specification
General purpose diode
BAS221
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
102
10
200
0
MBG381
100
Tj (
oC)
IR
(
µA)
1
10 2
10
1
(1)
(2)
(1) VR =VRmax; maximum values.
(2) VR =VRmax; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
handbook, halfpage
04
8
6
2
1.0
0.8
0.2
0.6
0.4
MBG447
VR (V)
Cd
(pF)
Fig.7 Reverse recovery time and waveforms.
(1) IR = 3 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Circuit capacitance C
≤ 1 pF (oscilloscope input + parasitic capacitance).
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V
I x R
RF
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881



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