AMBTA92Q

Document number: DS40184 Rev. 1 - 2

2 of 5

www.diodes.com

May 2018

© Diodes Incorporated

AMBTA92Q

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-300

V

Collector-Emitter Voltage

VCEO

-300

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-500

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

PD

300

mW

Thermal Resistance, Junction to Ambient

(Note 6)

RJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 7)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes:

6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air

conditions whilst operating in a steady-state.

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Collector-Base Breakdown Voltage

BVCBO

-300



V

IC = -100µA

Collector-Emitter Breakdown Voltage

BVCEO

-300



V

IC = -1.0mA

Emitter-Base Breakdown Voltage

BVEBO

-5.0



V

IE = -100µA

Collector Cut-Off Current

ICBO



-250

nA

VCB = -200V

Emitter Cut-Off Current

IEBO



-100

nA

VEB = -3.0V

ON CHARACTERISTICS (Note 8)

DC Current Gain

hFE

25

40

25









IC = -1.0mA, VCE = -10V

IC = -10mA, VCE = -10V

IC = -30mA, VCE = -10V

Collector-Emitter Saturation Voltage

VCE(SAT)



-0.5

V

IC = -20mA, IB = -2.0mA

Base-Emitter Saturation Voltage

VBE(SAT)



-0.9

V

IC = -20mA, IB = -2.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo



6.0

pF

VCB = -20V, f = 1.0MHz, IE = 0

Current Gain-Bandwidth Product

fT

50



MHz

VCE = -20V, IC = -10mA,

f = 100MHz

Note:

8.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.