| Electronic Components Datasheet Search |
|
BAT17 Datasheet(PDF) 3 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BAT17 Datasheet(HTML) 3 Page - NXP Semiconductors |
|
3 / 8 page ![]() 1999 May 26 3 Philips Semiconductors Product specification Schottky barrier diode BAT17 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz. THERMAL CHARACTERISTICS Note 1. Refer to SOT23 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 350 mV IF =1mA 450 mV IF =10mA 600 mV IR reverse current VR = 3 V; see Fig.3 0.25 µA VR =3V; Tamb =60 °C; see Fig.3 1.25 µA rD diode forward resistance f = 1 kHz; IF = 5 mA 15 Ω Cd diode capacitance f = 1 MHz; VR = 0; see Fig.4 1pF F noise figure f = 900 MHz; note 1 8dB SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |