1999 May 26

2

Philips Semiconductors

Product specification

Schottky barrier diode

BAT720

FEATURES

• Ultra high switching speed

• Low forward voltage

• Guard ring protected

• Small plastic SMD package.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits.

DESCRIPTION

Planar Schottky barrier diode with an integrated guard ring for stress protection

in a small SOT23 plastic SMD package.

PINNING

PIN

DESCRIPTION

1

anode

2

not connected

3

cathode

Fig.1 Simplified outline (SOT23) and symbol.

Marking code: L6p = made in Hong Kong; L6t = made in Malaysia

.

handbook, halfpage

MAM394

2

n.c.

1

3

Top view

12

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

40

V

continuous forward current

−

500

mA

non-repetitive peak forward current

−

2A

storage temperature

−65

+150

°C

junction temperature

−

125

°C