BAT754_SER

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©

Nexperia B.V. 2012. All rights reserved.

Product data sheet

Rev. 3 — 9 October 2012

3 of 10

Nexperia

BAT754 series

Schottky barrier diodes

5.

Limiting values

[1]

Tj =25 C before surge.

6.

Thermal characteristics

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

7.

Characteristics

[1]

Pulse test: tp  300 s;  0.02.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VR

reverse voltage

-

30

V

IF

forward current

-

200

mA

IFRM

repetitive peak forward

current

tp  1s;  0.5

300

mA

IFSM

non-repetitive peak

forward current

sine wave;

tp <8.3 ms

[1] -600

mA

Per device; one diode loaded

Tj

junction temperature

-

125

C

Tamb

ambient temperature

55

+125

C

Tstg

storage temperature

65

+150

C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device; one diode loaded

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W

Table 7.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

[1]

IF = 0.1 mA

-

-

200

mV

IF = 1 mA

-

-

260

mV

IF = 10 mA

-

-

340

mV

IF = 30 mA

-

-

420

mV

IF = 100 mA

-

600

-

mV

IR

reverse current

VR =25V

[1] --2

A

Cd

diode capacitance

f = 1 MHz; VR = 1 V

--10

pF