CED25N02/CEU25N02

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

23

0.4

1

-100

100

1

mΩ

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS

VSD

Typ

Max

20

VDS = 20V, VGS = 0V

VGS = 10V, VDS = 0V

VGS = -10V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 4.5V, ID = 25A

VDD = 10V, ID = 12.5A,

VGS = 4.5V, RGEN = 6Ω

VDS = 10V, ID = 12.5A,

VGS = 4.5V

VDS = 15V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 25A

500

115

90

9

14

32

13

11

1.5

3

25

1.2

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

17.5

33

mΩ

VGS = 2.5V, ID = 12.5A

23

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.L = 1mH, IAS =5A, VDD = 16V, RG = 25Ω, Starting TJ = 25 C.