BAV70T datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Dec 19

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAV70T

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF = 1 mA

0.715

IF = 10 mA

0.855

IF =50mA

IF = 150 mA

1.25

reverse current

see Fig.5

VR = 25 V

VR =75V

µA

VR = 25 V; Tj = 150 °C60

µA

VR = 75 V; Tj = 150 °C

100

µA

diode capacitance

VR = 0; f = 1 MHz; see Fig.6

1.5

trr

reverse recovery time

switching from IF = 10 mA to IR =10mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

4ns

Vfr

forward recovery voltage

switched to IF = 10 mA; tr = 20 ns; see Fig.8

1.75

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

one diode loaded

350

K/W

BAV70T Datasheet(PDF) 3 Page - NXP Semiconductors

BAV70T Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL