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BAV73 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAV73 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1997 May 06 3 Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration BAV73 ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF forward voltage IF = 100 mA − 1V IF = 200 mA − 1.25 V V(BR)R reverse breakdown voltage IR = 100 µA 250 − V IR reverse current VR = 250 V − 100 nA VR = 250 V; Tj = 150 °C − 100 µA Cd diode capacitance VR = 0; f = 1 MHz − 5pF trr reverse recovery time switching from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR =3mA − 50 ns SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 360 K/W |
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