1997 Oct 21

2

Philips Semiconductors

Product specification

High-speed switching diode array

BAV756S

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• General purpose switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAV756S consists of four

high-speed switching diodes

fabricated in planar technology, and

encapsulated in the small SMD

SOT363 plastic package. One pair of

diodes has a common cathode; the

other pair has a common anode.

PINNING

PIN

DESCRIPTION

1

anode (a1)

2

cathode (k1)

3

common anode

4

cathode (k2)

5

anode (a2)

6

common cathode

handbook, halfpage

65

4

12

Fig.1 Simplified outline (SOT363) and symbol.

Marking code: A7t.

MSA370

12

3

65

4

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. One or more diodes loaded.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

single diode loaded; see Fig.2

−

250

mA

all diodes loaded; see Fig.2

−

100

mA

repetitive peak forward current

−

450

mA

non-repetitive peak forward current

surge; see Fig.4

t=1

µs

−

4A

t=1ms

−

1A

t=1s

−

0.5

A

total power dissipation

−

350

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C