CED6196/CEU6196

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

24

1

3

-100

100

1

mW

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics c

Dynamic Characteristics d

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics d

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage c

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS

VSD

Typ

Max

60

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 19A

VDD = 30V, ID = 20A,

VGS = 10V, RGEN = 4.7W

VDS = 48V, ID = 20A,

VGS = 4.5V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 28A

1455

80

70

15

4

37

5

13.5

3.6

8.6

28.8

1.2

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

20

30

mW

VGS = 4.5V, ID = 10A

23

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Device Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

e.L =1mH, IAS =10A, VDD = 25V, RG = 25W, Starting TJ = 25 C.