BAY80 datasheet(3/6 Pages) PHILIPS

3 / 6 page

1996 Sep 18

Philips Semiconductors

Product speciﬁcation

General purpose diode

BAY80

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3

IF = 0.1 mA

450

550

IF = 10 mA

650

800

IF = 50 mA

730

920

IF = 100 mA

780

1000

IF = 150 mA

−

1.07

reverse current

see Fig.5

VR = 120 V

−

100

VR = 120 V; Tj = 150 °C

−

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

6pF

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.7

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

375

K/W

BAY80 Datasheet(PDF) 3 Page - NXP Semiconductors

BAY80 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL