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BB131 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BB131
Description  VHF variable capacitance diode
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BB131 Datasheet(HTML) 2 Page - NXP Semiconductors

  BB131 Datasheet HTML 1Page - NXP Semiconductors BB131 Datasheet HTML 2Page - NXP Semiconductors BB131 Datasheet HTML 3Page - NXP Semiconductors BB131 Datasheet HTML 4Page - NXP Semiconductors BB131 Datasheet HTML 5Page - NXP Semiconductors BB131 Datasheet HTML 6Page - NXP Semiconductors BB131 Datasheet HTML 7Page - NXP Semiconductors BB131 Datasheet HTML 8Page - NXP Semiconductors  
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1998 Sep 15
2
Philips Semiconductors
Product specification
VHF variable capacitance diode
BB131
FEATURES
• Excellent linearity
• Very small plastic SMD package
• C28: 1 pF; ratio: 14.
APPLICATIONS
• Electronic tuning in satellite tuners
• Tunable coupling
• VCO.
DESCRIPTION
The BB131 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
20
mA
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+125
°C
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: P1.
Cathode side indicated by a bar.
handbook, 4 columns
ka
MAM130
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. VR is the value at which Cd = 9 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IR
reverse current
VR = 30 V; see Fig.3
−
10
nA
VR =30V; Tj =85 °C; see Fig.3
−
200
nA
rs
diode series resistance
f = 470 MHz; note 1
−
3
Ω
Cd
diode capacitance
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
817
pF
VR = 28 V; f = 1 MHz; see Figs 2 and 4
0.7
1.055
pF
capacitance ratio
f = 1 MHz
12
16
C
d 0.5V
()
C
d28V
()
----------------------



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