8.3.3 Input Protection

The JFE150 features input protection diodes that are used for surge clamping and ESD events. The diodes are

rated to withstand high current surges for short times, steering current from the gate (G) pin to the VCH and VCL

pins. The diodes also feature very low leakage, removing the need for external protection devices that can have

high leakage currents or nonlinear capacitance that degrade the distortion performance.

8.4 Device Functional Modes

The JFE150 functionality is identical to standard N-channel depletion JFET devices. The gate-to-source (VGS)

voltage, drain-to-source voltage (VDS) and drain-to-source current (IDS) determine the region of operation.

• For VGS < VGSC: JFE150 conduction channel is closed; IDS is only determined by junction leakage current.

• For VGS > VGSC: Two modes of operation can exist depending on VDS. When VDS is less than the linear

(saturation) region threshold (see Figure 8-1), the device operates in the linear region, meaning that the

device behaves as a resistor connected from drain-to-source with minimal variation from any changes in

VGS. When VDS is greater than the linear (saturation) region threshold, IDS has a strong dependance on VGS,

where the relationship is described by the parameter gm.

Figure 8-1. VDS vs IDS

JFE150

SLPS732B – JUNE 2021 – REVISED APRIL 2023

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