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SLG55221 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # SLG55221
Description  Dual Rail High Voltage Gate Driver
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

SLG55221 Datasheet(HTML) 2 Page - Renesas Technology Corp

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Datasheet
9-Feb-2022
CFR0011-120-01
Revision 1.02
Page 2 of 9
SLG55221-120010
SLG55220-120010
Dual Rail High Voltage Gate Driver
©2022 Renesas Electronics Corporation
Pin Description
Overview
The SLG55221/220 N-Channel FET Gate Drivers are used for controlling and ramping slew rate of the source voltage on N-Chan-
nel FET switches from a CMOS logic level input. Intended as a supporting control element for switched voltage rails in energy
efficient, advanced power management systems, the SLG55221/220 also integrates circuits to discharge opened switched volt-
age rails. The gate driver is available in a variety of configurations supporting a range of turn-on slew rates from 0.80V/ms up to
2V/ms which, depending on load supplying source voltages in the range of 1.0V to 20V results in ramp times from 200
µs to over
20ms (see Application Section). Additionally, an internal discharge circuit provides a controlled path to remove charge from open
power rails. The SLG55221/220 gate drive is packaged in an 8 pin DFN package. A power good (PG) signal is asserted when
FET1 is fully ON.
When used with external N-Channel FETs, the SLG55221 supports low transient, energy efficient switching of high current loads
at source voltages ranging from 1.0V to 20V.
A ‘Low Drive’ version of the device, is available to support applications where FET Vgs cannot exceed 8V.
Ordering Information
Pin #
Pin Name
Type
Pin Description
VCC
1
Power
Supply Voltage
2
ON
Input
CMOS Logic Level. See SLG55251 for Control Input ON# instead of ON.
3
DIS2
Output
Discharge Connection for Load2
4
GND
GND
Ground
5
D
Input
FET Drain Connection (Connect to FET with highest VD voltage)
6
S/DIS1
Input/Output
Source Connection,
Discharge Connection for Load1
7
G1/G2
Output
FET Gate Drive for FET1, FET2
8
PG
Output
CMOS Power Good Signal
Exposed
Bottom
Pad
GND
GND
Ground
Part Number
Ramp Slew
Rate
(Volts/ms)
Delay Time
(ms)
Discharge
Resistor
(ohms)
Package Type
SLG55220 -120010V
1.30
0.50
200
TDFN-8
SLG55221-120010V
1.30
0.50
200
TDFN-8
SLG55220 -120010VTR
1.30
0.50
200
TDFN-8 - Tape and Reel (3k units)
SLG55221-120010VTR
1.30
0.50
200
TDFN-8 - Tape and Reel (3k units)



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