BAV116WQ

Document number: DS42774 Rev. 2 - 2

2 of 5

www.diodes.com

April 2021

© Diodes Incorporated

BAV116WQ

Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

130

V

Forward Continuous Current

IFM

215

mA

Repetitive Peak Forward Current

IFRM

500

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0ms

@ t = 1.0s

IFSM

4.0

1.0

0.5

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

PD

250

mW

Thermal Resistance Junction to Ambient Air (Note 5)

RθJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

V(BR)R

130





V

IR = 100µA

Forward Voltage

VF





0.90

1.0

1.1

1.25

V

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

Leakage Current (Note 6)

IR





5.0

80

nA

nA

VR = 75V, TJ = +25°C

VR = 75V, TJ = +125°C

Total Capacitance

CT



2.4

5

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

tRR





3.0

µs

IF = IR = 10mA,

IRR = 0.1 x IR, RL = 100Ω

Notes:

5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.