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BB147 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BB147 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 4 page ![]() 1996 Sep 20 2 Philips Semiconductors Product specification VHF variable capacitance diode BB147 FEATURES • Ultra high ratio • Excellent matching to 2% DMA (Direct Matching Assembly) • Very small plastic SMD package • C28: 2.6 pF; ratio 40. APPLICATIONS • Electronic tuning in television tuners with extended VHF range • Voltage controlled oscillators (VCO). DESCRIPTION The BB147 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 20 mA Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +125 °C Fig.1 Simplified outline (SOD323) and symbol. Marking code: P7. Cathode side indicated by a bar. handbook, 4 columns ka MAM130 ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. Note 1. VR is the value at which Cd = 30 pF. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IR reverse current VR = 30 V; see Fig.3 − 20 nA VR = 30 V; Tj =85 °C; see Fig.3 − 200 nA rs diode series resistance f = 100 MHz; note 1 − 2.8 Ω Cd diode capacitance VR = 0.5 V; f = 1 MHz; see Figs 2 and 4 92 112 pF VR = 28 V; f = 1 MHz; see Figs 2 and 4 2.4 2.8 pF capacitance ratio f = 1 MHz 35 43 capacitance matching VR = 0.5 to 28 V; in a sequence of 8 diodes (gliding) − 2% C d 0.5V () C d28V () ---------------------- C d ∆ C d ---------- |
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