BCM847BS

Document number: DS41216 Rev. 2 - 2

2 of 5

www.diodes.com

June 2022

© Diodes Incorporated

BCM847BS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

6

V

Collector Current

IC

100

mA

Peak Collector Current

ICM

200

mA

Peak Base Current

IBM

200

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

PD

200

mW

Thermal Resistance, Junction to Ambient (Note 5)

RJA

625

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

ESD Ratings (Note 6)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge

– Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge

– Machine Model

ESD MM

400

V

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic (Note 7)

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

50

—

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCEO

45

—

—

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

6

—

—

V

IE = 100µA

DC Current Gain

hFE

200

—

450

—

VCE = 5V, IC = 2mA

DC Current Gain Matching

hFE1/hFE2

0.9

1

1.1

—

VCE = 5V, IC = 2mA

Collector-Emitter Saturation Voltage

VCE(sat)

—

—

100

400

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

Base-Emitter Saturation Voltage

VBE(sat)

—

755

—

mV

IC = 10mA, IB = 0.5mA

—

905

—

mV

IC = 100mA, IB = 5mA

Base-Emitter Voltage

VBE(on)

610

665

710

mV

VCE = 5V, IC = 2mA

Base-Emitter Voltage Matching

VBE1(on) -

VBE2(on)

-2

—

2

mV

VCE = 5V, IC = 2mA

Collector-Cutoff Current

ICBO

—

—

—

—

15

5

nA

µA

VCB = 40V

VCB = 40V, TA = +125°C

Emitter-Cutoff Current

IEBO

—

—

20

nA

VEB = 5V

Gain Bandwidth Product

fT

100

—

—

MHz

VCE = 5V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—

2

3

pF

VCB = 10V, f = 1MHz

Emitter-Base Capacitance

CEBO

—

11

—

pF

VEB = 0.5V, f = 1MHz

Notes:

5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is

measured under still air conditions whilst operating in a steady-state.

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

7. Short duration pulse test used to minimize self-heating effect.