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BB155 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BB155
Description  Low-voltage variable capacitance diode
PDF  4 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BB155 Datasheet(HTML) 2 Page - NXP Semiconductors

  BB155 Datasheet HTML 1Page - NXP Semiconductors BB155 Datasheet HTML 2Page - NXP Semiconductors BB155 Datasheet HTML 3Page - NXP Semiconductors BB155 Datasheet HTML 4Page - NXP Semiconductors  
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1996 Sep 20
2
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
BB155
FEATURES
• Very low capacitance spread
• Excellent linearity
• Low series resistance
• Very small plastic SMD package.
APPLICATIONS
• Voltage controlled oscillators
(VCO), especially in mobile
communication equipment.
DESCRIPTION
The BB155 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
10
V
IF
continuous forward current
−
20
mA
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+125
°C
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: PE.
Cathode side indicated by a bar.
handbook, 4 columns
ka
MAM130
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
Note
1. VR is the value at which Cd = 30 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IR
reverse current
VR = 10 V; see Fig.3
−−
10
nA
VR = 10 V; Tj =85 °C; see Fig.3
−−
200
nA
rs
diode series resistance
f = 100 MHz; note 1
−
0.35
0.6
Ω
Cd
diode capacitance
VR = 0.34 V; f = 1 MHz; see Figs 2 and 4
45.2
−
49.8
pF
VR = 2.82 V; f = 1 MHz; see Figs 2 and 4
24.55
−
26.7
pF



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