CD0603/1005 Schottky Barrier Chip Diode Series

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Parameter

Symbol

CD0603-

CD0603-

CD0603-

CD0603-

CD0603-

CD0603-

Unit

B00340

B0130L

B0140L

B0140R

B0230

B0240

Repetitive Peak

Reverse Voltage

VRRM

45

35

45

45

35

45

V

Reverse Voltage

VR

40

30

40

40

30

40

V

Average Forward Current

Io

30

100

100

100

200

200

mA

Forward Current,

Surge Peak

Isurge

500*

1000*

1000*

1000*

2000*

2000*

mA

Power Dissipation

PD

150

mW

Storage Temperature

TSTG

-40 to +125

°C

Junction Temperature

TJ

-40 to +125

°C

Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)

* Condition: 8.3 ms single half sine-wave superimposed on rate load

(JEDEC method).

Parameter

Symbol

CD1005-

CD1005-

CD1005-

CD1005-

CD1005-

CD1005-

Unit

B00340

B0130L

B0140L

B0140R

B0230

B0240

Repetitive Peak

Reverse Voltage

VRRM

45

35

45

45

35

45

V

Reverse Voltage

VR

40

30

40

40

30

40

V

Average Forward Current

Io

30

100

100

100

200

200

mA

Forward Current,

Surge Peak

Isurge

500*

1000*

1000*

1000*

3000*

3000*

mA

Power Dissipation

PD

200

250

250

250

250

250

mW

Storage Temperature

TSTG

-40 to +125

°C

Junction Temperature

TJ

-40 to +125

°C