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BSP75G Datasheet(PDF) 5 Page - Diodes Incorporated

Part # BSP75G
Description  60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BSP75G Datasheet(HTML) 5 Page - Diodes Incorporated

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BSP75G
Document number: DS33015 Rev. 5 - 2
5 of 8
www.diodes.com
June 2018
© Diodes Incorporated
BSP75G
Electrical Characteristics (@TA = +25°C, unless otherwise stated.)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
70
75
V
ID=10mA
Off state Drain Current
IDSS
—
0.1
3
μA
VDS=12V, VIN=0V
Off state Drain Current
IDSS
—
3
15
μA
VDS=32V, VIN=0V
Input Threshold Voltage (Note 8)
VIN(TH)
1
2.1
—
V
VDS=VGS, ID=1mA
Input Current
IIN
—
0.7
1.2
mA
VIN=5V
Input Current
IIN
—
1.5
2.7
mA
VIN=7V
Input Current
IIN
—
4
7
mA
VIN=10V
Static Drain-Source On-State Resistance
RDS(ON)
—
520
675
m
Ω
VIN=5V, ID=0.7A
Static Drain-Source On-State Resistance
RDS(ON)
—
385
550
mΩ
VIN=10V, ID=0.7A
Current Limit (Note 9)
ID(LIM)
0.7
1.1
1.75
A
VIN=5V, VDS>5V
Current Limit (Note 9)
ID(LIM)
2
3
4
A
VIN=10V, VDS>5V
Dynamic Characteristics
Turn-On Time (VIN to 90% ID)
tON
—
2.2
—
μs
RL=22Ω, VIN=0 to 10V, VDD=12V
Turn-Off Time (VIN to 90% ID)
tOFF
—
13
—
μs
RL=22Ω, VIN=10V to 0V, VDD=12V
Slew Rate On (70 to 50% VDD)
-dVDS/dtON
—
10
—
V/μs
RL=22Ω, VIN=0 to 10V, VDD=12V
Slew Rate Off (50 to 70% VDD)
dVDS/dtON
—
3.2
—
V/μs
RL=22Ω, VIN=10V to 0V, VDD=12V
Protection Functions (Note 10)
Minimum Input Voltage for Over
Temperature Protection
VPROT
4.5
—
—
V
—
Thermal Overload Trip Temperature
TJT
+150
+175
—
°C
—
Thermal Hysteresis
—
—
+10
—
°C
—
Unclamped Single Pulse Inductive Energy
TJ = +25°C
EAS
550
—
—
mJ
ID(ISO)=0.7A, VDD=32V
Unclamped Single Pulse Inductive Energy
TJ = +150°C
EAS
200
—
—
mJ
ID(ISO)=0.7A, VDD=32V
Inverse Diode
Source Drain Voltage
VSD
—
—
1
V
VIN=0V, -ID=1.4A
Notes:
8. Protection features may operate outside spec for VIN < 4.5V.
9. The drain current is limited to a reduced value when VDS exceeds a safe level.
10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered
as
”outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.



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