SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 – FEBRUARY 1996

COMPLEMENTARY TYPE –

BSR31 – BSR41

BSR33 – BSR43

PARTMARKING DETAILS –

BSR31 – BR2

BSR33 – BR4

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BSR31

BSR33

UNIT

Collector-Base Voltage

VCBO

-70

-90

V

Collector-Emitter Voltage

VCEO

-60

-80

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Power Dissipation at Tamb=25°C

PTOT

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

BSR31

Breakdown Voltage BSR33

V(BR)CBO

-70

-90

V

V

IC=-100µA

IC=-100µA

Collector-Emitter

BSR31

Breakdown Voltage BSR33

V(BR)CEO

-60

-80

VIC=-10mA

IC=-10mA

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-10mA

Collector Cut-Off Current

ICBO

-100

-50

nA

µA

VCB=-60V

VCB=-60V, Tamb=125°C

Collector-Emitter Saturation

Voltage

VCE(sat)

-0.25

-0.5

V

V

IC =-150mA, IB=-15mA*

IC =-500mA, IB=-50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.0

-1.2

V

V

IC=-150mA, IB=-15mA*

IC =-500mA, IB=-50mA*

Static Forward Current

Transfer Ratio

hFE

30

100

50

300

IC =-100µA, VCE=-5V*

IC =-100mA, VCE =-5V*

IC =-500mA, VCE =-5V*

Collector Capacitance

Cc

20

pF

VCB =-10V, f =1MHz

Emitter Capacitance

Ce

120

pF

VEB =-0.5V, f =1MHz

Transition Frequency

fT

100

MHz

IC=-50mA, VCE=-10V

f =35MHz

Turn-On Time

Ton

500

ns

VCC =-20V, IC =-100mA

IB1 =-IB2 =-5mA

Turn-Off Time

Toff

650

ns

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

BSR31

BSR33

C

C

B

E

SOT89

3 - 66

Not Recommended for New Design

Please Use FMMT591