BSR33

Datasheet Number: DS33017 Rev. 5 - 2

4 of 7

www.diodes.com

November 2013

© Diodes Incorporated

BSR33

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ.

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-90

–

–

V

IC = -100μA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

-80

–

–

V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-5

–

–

V

IE = -100μA

Collector Cutoff Current

ICBO

–

–

-100

-50

nA

µA

VCB = -60V

VCB = -60V, TJ = +150°C

DC current transfer Static ratio (Note 11)

hFE

30

100

50

–

–

–

–

300

–

–

IC = -100µA, VCE = -5V

IC = -100mA, VCE = -5V

IC = -500mA, VCE = -5V

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

–

–

–

–

-0.25

-0.5

V

IC = -150mA, IB = -15mA

IC = -500mA, IB = -50mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)

–

–

-1.0

-1.2

V

IC = -150mA, IB = -15mA

IC = -500mA, IB = -50mA

Transitional Frequency

fT

100

–

–

MHz

IC = -50mA, VCE = -10V

f = 35MHz

Output capacitance

Cobo

–

–

20

pF

VCB = -10V, f = 1MHz

Input Capacitance

Cibo

–

–

120

pF

VCB = -0.5V, f = 1MHZ

Turn-On Time

Ton

–

–

500

ns

VCC =-20V, IC = -100mA

IB1 =IB2 = -5mA

Turn-Off Time

Toff

–

–

650

ns

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.