SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 – FEBRUARY 1996

7

COMPLEMENTARY TYPES – BSR40 – BSR30

BSR42 – BSR32

PARTMARKING DETAIL –

BSR40 – AR1

BSR42 – AR3

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BSR40

BSR42

UNIT

Collector-Base Voltage

VCBO

70

90

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Base Current

IB

100

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

BSR40

Breakdown Voltage BSR42

V(BR)CBO

70

90

V

V

IC=100µA

IC=100µA

Collector-Emitter

BSR40

Breakdown Voltage BSR42

V(BR)CEO

60

80

V

V

IC=10mA

IC=10mA

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=10µA

Collector Cut-Off

Current

ICBO

100

50

nA

µA

VCB=60V

VCB=60V, Tamb=125°C

Collector-Emitter

Saturation Voltage

VCE(sat)

0.25

0.5

V

V

IC =150mA, IB=15mA

IC =500mA, IB=50mA

Base-Emitter

Saturation Voltage

VBE(sat)

1.0

1.2

V

V

IC =150mA, IB=15mA

IC =500mA, IB=50mA

Static Forward

Current Transfer Ratio

hFE

10

40

30

120

IC =100µA, VCE=5V

IC =100mA, VCE=5V

IC =500mA, VCE=5V

Collector Capacitance

Cc

12

pF

VCB =10V, f =1MHz

Emitter Capacitence

Ce

90

pF

VEB =0.5V, f=1MHz

Transition Frequency

fT

100

MHz

IC=50mA, VCE=10V

f =35MHz

Turn-On Time

Ton

250

ns

VCC =20V, IC =100mA

IB1 =-IB2 =-5mA

Turn-Off Time

Toff

1000

ns

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT493 datasheet.

BSR40

BSR42

C

C

B

E

3 - 67

Not Recommended for New Design

Please Use FMMT491